2N5416 PNP General Purpose Transistor
2N5416 PNP General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 300V
2. Collector-Base Voltage (VCBO): 350V
3. Collector Current (IC): 1A
4. Power Dissipation (PD): 10W
5. Transition Frequency (fT): 15MHz min
6. Package: TO-39
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Description
The 2N5416 is a PNP silicon epitaxial planar transistor housed in a hermetic TO-39 metal case, engineered for high-voltage, low-current applications. Its standout figure is a 350V VCBO / 300V VCEO breakdown rating, making it suitable as a driver in high-voltage, low-current inverters, series regulators, and switching circuits.
Despite the high voltage rating, it still handles a full 1A of continuous collector current with a 10W dissipation rating, giving it more current headroom than typical small high-voltage parts. It is the higher-voltage member of the complementary 2N5415/2N5416 pair.
- High voltage handling — 300V VCEO, 350V VCBO
- 1A continuous collector current
- 10W power dissipation
- Hermetically sealed TO-39 metal case
- 15MHz minimum transition frequency
- Suited for high-voltage inverters and series regulators
- hFE minimum of 25–30 at 5mA
Specification
Specification
| WeightWeight | 1 g |
|---|---|
| Dimensions | 0,5 × 0,5 × 0,45 cm |
| Polarity | PNP |
| Package | TO-39 (hermetic metal can) |
| Emitter-Base Voltage (VEBO) | 6V |
| Base Current (IB) | 0.5A max |
| Output Capacitance (Cob) | 15pF max |
| Complementary Family Member | 2N5415 |
