2N5415 PNP General Purpose Transistor
2N5415 PNP General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 200V
2. Collector-Base Voltage (VCBO): 200V
3. Collector Current (IC): 1A
4. Power Dissipation (PD): 10W
5. Emitter-Base Voltage (VEBO): 4V
6. Package: TO-39
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Description
The 2N5415 is a PNP silicon epitaxial planar transistor in a hermetically sealed TO-39 metal case, the lower-voltage member of the 2N5415/2N5416 complementary pair. It carries a 200V VCEO/VCBO rating and 1A continuous collector current, aimed at consumer and industrial line-operated equipment where moderate high-voltage handling is needed.
It is particularly well suited as a driver in high-voltage, low-current inverters, switching circuits, and series regulators, and its metal TO-39 package gives it good thermal transfer for a 10W dissipation rating in case-mounted use.
- High voltage handling — 200V VCEO/VCBO
- 1A continuous collector current
- 10W power dissipation (case-mounted)
- Hermetically sealed TO-39 metal case
- Suited for high-voltage inverters and series regulators
- Complementary family member 2N5416 available
- 4V emitter-base voltage rating
Specification
Specification
| WeightWeight | 1 g |
|---|---|
| Dimensions | 0,5 × 0,5 × 0,45 cm |
| Polarity | PNP |
| Package | TO-39 (hermetic metal can) |
| Base Current (IB) | 0.5A max |
| Complementary Family Member | 2N5416 |
| Typical Applications | High-voltage inverter driver, Series regulator, Switching |
