2N2222 NPN Transistor

NPN BJT with max Ic = 800 mA
Max Vce = 40 V
Gain (hFE) between 100–300
Fast switching speed
TO-92 / TO-18 package options
Ideal for general purpose amplification and switching

SKU: 2N2222

1,00 EGP

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Description

The 2N2222 is a widely used NPN bipolar junction transistor (BJT) suitable for switching and amplification purposes. Its robust design and high collector current capacity make it ideal for medium-power applications in both analog and digital circuits.

Specifications:

Type: NPN Bipolar Junction Transistor
Gain (h_FE): 110 (typical)
Collector Current (I_C): Up to 600mA
Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 30V
- Collector-Base Voltage (V_CBO): 60V
- Emitter-Base Voltage (V_EBO): 5V
Power Dissipation: 500mW (max)
Package Type: TO-18

Features:

High collector current (up to 600mA)
Fast switching speed
Suitable for medium-power amplification
Durable and reliable in various applications

Applications:

Signal amplification
Switching small to medium loads
LED drivers
Microcontroller interfacing

Package Includes:

1 x 2N2222 NPN Transistor

This versatile transistor is perfect for hobbyists and professionals working on switching and amplification tasks in low to medium-power circuits.

Specification

General

Weight Weight	0,00 g
Dimensions	0,4 × 0,4 × 0,5 mm
Product Name	2N2222 – NPN Transistor
Type	Bipolar Junction Transistor (BJT)
Polarity	NPN
Maximum Collector Current (Ic)	800 mA
Maximum Collector-Emitter Voltage (Vce)	40 V
Maximum Power Dissipation	500 mW
DC Current Gain (hFE)	100–300 (typical)
Package Type	TO-92
Mounting Type	Through-Hole
Operating Temperature	-55°C to +150°C
Applications	Switching Circuits, Amplification, Arduino / DIY Projects, Signal Processing
Package Contents	1× 2N2222 NPN Transistor