[match_prediction match_id="3"]
2N3439 NPN General Purpose Transistor
2N3439 NPN General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 350V
2. Collector-Base Voltage (VCBO): 450V
3. Collector Current (IC): 1A
4. DC Current Gain (hFE): 10-160
5. Power Dissipation (PD): 5W (Tc)
6. Package: TO-39
1,00 EGP
Description
The 2N3439 is a silicon epitaxial planar NPN transistor in a TO-39 metal case, the higher-voltage member of the 2N3439/2N3440 family, rated for 350V collector-emitter and 450V collector-base voltage. It’s designed for consumer and industrial line-operated equipment, particularly as a driver in high-voltage, low-current inverters, switching circuits, and series regulators.
With 1A continuous collector current and hFE of 10-160 across a wide current range, it delivers substantial voltage headroom for circuits operating close to mains-adjacent DC rails, backed by fast 1µs turn-on and 10µs turn-off switching times.
- Very high voltage handling — 350V VCEO, 450V VCBO
- 1A continuous collector current
- hFE of 10–160 across 0.2-20mA range
- 800mW power dissipation (Ta=25°C), 5W (Tc=25°C)
- Hermetically sealed TO-39 metal case
- Suited to high-voltage inverters, switching, and series regulators
Specification
General
| WeightWeight | 0,00 g |
|---|---|
| Polarity | NPN |
| Package | TO-39 (hermetic metal can) |
| Emitter-Base Voltage (VEBO) | 7V |
| Collector-Emitter Saturation Voltage (VCE sat) | 0.5V @50mA |
| Turn-on Time (ton) | 1µs max |
| Turn-off Time (toff) | 10µs max |
