2N2369 NPN General Purpose Transistor
2N2369 NPN General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 15V
2. Collector-Base Voltage (VCBO): 40V
3. Collector Current (IC): 200mA
4. Transition Frequency (fT): 500MHz
5. DC Current Gain (hFE): 40 min
6. Package: TO-18
Apple Shopping Event
1,00 EGP
Payment Methods:
Description
The 2N2369 is an NPN silicon planar epitaxial transistor in a TO-18 metal case, designed specifically for high-speed saturated switching applications. It’s rated at 15V collector-emitter and 40V collector-base voltage with 200mA collector current, and delivers a 500MHz transition frequency — well beyond general-purpose small-signal transistors.
Its low saturation voltage and fast turn-off make it a classic choice for high-speed digital and pulse circuits, and it’s capable enough to double as a VHF amplifier in a pinch when a dedicated RF part isn’t available.
- 500MHz transition frequency
- Low saturation voltage, fast switching, short turn-off
- 15V collector-emitter, 40V collector-base voltage
- 200mA collector current, 360mW power dissipation
- Hermetically sealed TO-18 metal case
- hFE minimum of 40
- Suited to high-speed switching and VHF amplification
Specification
Specification
| WeightWeight | 1 g |
|---|---|
| Dimensions | 0,5 × 0,5 × 0,45 cm |
| Polarity | NPN |
| Package | TO-18 (hermetic metal can) |
| Emitter-Base Voltage (VEBO) | 4.5V |
| Collector-Emitter Voltage (VCES) | 40V |
| Typical Applications | High-speed switching, VHF amplification |
