IRF740 N-Channel Power MOSFET (400V, 10A, TO-220)
- 400V Drain-to-Source Voltage
- 10A Continuous Drain Current
- Low R DS(on) for efficient switching
- TO-220 package for easy mounting
- Ideal for SMPS, inverters, and motor control
22,00 EGP
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Description
Handle high-voltage and high-current switching with confidence using the IRF740 N-Channel Power MOSFET. Designed for demanding applications, this robust semiconductor delivers reliable performance with fast switching speeds and low on-resistance. Capable of safely handling up to 400V and a continuous drain current of 10A, it is an essential component for custom power supplies, motor control circuits, and industrial switching tasks. The industry-standard TO-220 package makes it easy to mount directly to a heatsink, ensuring optimal thermal management for your heavy-duty builds.
Key Features
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High Voltage Capacity: Safely switches loads up to 400V, making it ideal for high-voltage DC applications and power regulation.
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Robust Current Handling: Supports a continuous drain current of 10A (and pulsed currents up to 40A) to drive power-hungry hardware.
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Fast Switching Speeds: Minimized switching losses make it highly efficient for high-frequency applications like pulse-width modulation (PWM) and inverters.
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Thermal Efficiency: The rugged TO-220AB package features a metal mounting tab for seamless integration with standard heatsinks and thermal compounds.
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Low On-Resistance: Features a maximum $R_{DS(on)}$ of 0.55 Ω, reducing power dissipation and heat generation during continuous operation.
Technical Specifications
| Specification | Detail |
| Transistor Polarity | N-Channel |
| Drain-to-Source Voltage ($V_{DSS}$) | 400V |
| Continuous Drain Current ($I_D$) | 10A |
| Pulsed Drain Current ($I_{DM}$) | 40A |
| Gate-to-Source Voltage ($V_{GS}$) | ±20V |
| Drain-Source On-Resistance ($R_{DS(on)}$) | 0.55 Ω (Max) |
| Power Dissipation ($P_D$) | 125W |
| Package / Case | TO-220AB |
| Mounting Type | Through-Hole |
Specification
General
| WeightWeight | 0,0000 g |
|---|---|
| Dimensions | 14,5 × 10,1 × 4,7 cm |
| type | N-Channel MOSFET |
| drain-to-source-voltage-vds | 400 V |
| continuous-drain-current-id | 10 A (at 25°C) |
| pulsed-drain-current-id-pulse | 40 A |
| gate-threshold-voltage-vgsth | 2.0 – 4.0 V |
| gate-to-source-voltage-vgs-max | ±20 V |
| drain-source-on-resistance-rdson | 0.55 Ω (max) |
| total-gate-charge-qg | 67 nC |
| input-capacitance-ciss | 1400 pF |
| power-dissipation-pd | 125 W |
| package-type | TO-220 |
| mounting | Through-hole |
| technology | Planar, Standard Recovery |
