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2N2906 PNP Switching Transistor
2N2906 PNP Switching Transistor
1. Collector-Emitter Voltage (VCEO): 40V
2. Collector-Base Voltage (VCBO): 60V
3. Collector Current (IC): 600mA
4. Emitter-Base Voltage (VEBO): 5V
5. Package: TO-18
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Description
The 2N2906 is a PNP silicon planar epitaxial transistor in a TO-18 metal case, designed for high-speed saturated switching and general-purpose applications. It’s rated at 40V collector-emitter and 60V collector-base voltage with a 600mA collector current limit, sharing the same electrical envelope as its higher-gain sibling, the 2N2907.
As the PNP complement to the NPN 2N2221, it’s a classic hermetic switching transistor commonly paired with its NPN counterpart in complementary circuit designs.
- High current handling — 600mA maximum collector current
- 40V collector-emitter, 60V collector-base voltage
- Hermetically sealed TO-18 metal case
- 5V emitter-base voltage rating
- High-speed saturated switching design
- Complementary NPN counterpart available (2N2221)
Specification
Specification
| WeightWeight | 1 g |
|---|---|
| Dimensions | 0,5 × 0,5 × 0,45 cm |
| Polarity | PNP |
| Package | TO-18 (hermetic metal can) |
| Complementary Type | 2N2221 (NPN) |
| Typical Applications | High-speed saturated switching, General purpose |
