PN4355 PNP General Purpose Transistor

SKU: PN4355 Categories: ,

1,00 EGP

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Description

هذا الوصف والمواصفات تمت كتابته بمساعدة الذكاء الاصطناعي، يُرجى مراجعته قبل الشراء.
برجاء تأكيد الطلب على الواتساب للتأكد من توفر المخزون قبل الدفع

Specification

General

WeightWeight0,00 g
Product TypeBipolar Junction Transistor (BJT)
ModelPN4355
PolarityPNP
ApplicationGeneral Purpose Amplifier / Switch
Mounting TypeThrough-Hole
PackageTO-92
Pin Count3
Collector-Emitter Voltage (VCEO)60 V
Collector-Base Voltage (VCBO)60 V
Emitter-Base Voltage (VEBO)10 V
Emitter-Base Breakdown (V(BR)EBO)5.0 V @ IE=10 µA
Collector Current (IC)800 mA (max)
Power Dissipation (PD)625 mW @ 25°C
Operating / Storage Temperature-55°C to +150°C
Collector Cutoff Current (ICBO)50 nA (max)
Input Capacitance (Cibo)110 pF (max)
Output Capacitance (Cobo)30 pF (max)
Switching Time (ton)100 ns (max)
Switching Time (toff)400 ns (max)

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