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IRF740 N-Channel MOSFET
22,00 EGP
In stock
- 400V Drain-to-Source Voltage
- 10A Continuous Drain Current
- Low R DS(on) for efficient switching
- TO-220 package for easy mounting
- Ideal for SMPS, inverters, and motor control
In stock
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Description
IRF740 N-Channel Power MOSFET – High Voltage, Fast Switching, and Efficient Performance
Detailed Description:
The IRF740 is a high-voltage N-Channel Power MOSFET designed for fast switching and high-efficiency power control applications. With a drain-to-source voltage rating of 400V and a continuous drain current of 10A, it is suitable for use in power supplies, inverters, motor drivers, and high-voltage switching circuits.
Engineered using advanced planar technology, the IRF740 provides low gate charge and low on-resistance, allowing for efficient switching and reduced heat dissipation. It is widely used in both industrial and consumer electronics thanks to its reliability and cost-effectiveness.
Key Features:
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High Voltage Rating – 400V V<sub>DS</sub> – Ideal for high-power applications
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10A Continuous Drain Current – Suitable for moderate to high load switching
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Low R<sub>DS(on)</sub> (0.55Ω max) – Efficient performance with reduced power loss
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Fast Switching Speed – Great for PWM, SMPS, and high-frequency circuits
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Standard TO-220 Package – Easy to mount and heatsink-compatible
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Low Gate Drive Requirements – Fully enhancement-mode for simplified control
Applications:
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Power Supplies – High-voltage DC-DC converters, SMPS
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Motor Control – Used in H-bridges and motor drivers
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Lighting Systems – Dimmers and power regulators
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Inverters – DC to AC conversion systems
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Hobby & Educational Projects – Learn transistor switching and power control
Specifications:
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Part Number: IRF740
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Type: N-Channel Enhancement MOSFET
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V<sub>DS</sub>: 400V
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I<sub>D</sub> (Continuous): 10A
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R<sub>DS(on)</sub>: 0.55Ω (max)
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Gate Threshold Voltage (V<sub>GS(th)</sub>): 2.0V – 4.0V
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Total Gate Charge (Qg): ~71nC
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Package: TO-220
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Mounting Type: Through-hole
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Operating Temperature: -55°C to +150°C
The IRF740 delivers robust performance in high-voltage switching applications—reliable, efficient, and ready for your next power electronics project.
Customer Reviews
Specification
Overview
| Weight Weight | 2 g |
|---|---|
Dimensions
|
14,5 × 10,1 × 4,7 mm |
Specification
| type |
N-Channel MOSFET |
|---|---|
| drain-to-source-voltage-vds |
400 V |
| continuous-drain-current-id |
10 A (at 25°C) |
| pulsed-drain-current-id-pulse |
40 A |
| gate-threshold-voltage-vgsth |
2.0 – 4.0 V |
| gate-to-source-voltage-vgs-max |
±20 V |
| drain-source-on-resistance-rdson |
0.55 Ω (max) |
| total-gate-charge-qg |
67 nC |
| input-capacitance-ciss |
1400 pF |
| power-dissipation-pd |
125 W |
| package-type |
TO-220 |
| mounting |
Through-hole |
| technology |
Planar, Standard Recovery |
| Weight Weight |
2 |
