IRF530N 17A, 100V, 0.064 Ohm, N-Channel Power MOSFET
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100V, 17A N-Channel Power MOSFET
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Low R<sub>DS(on)</sub>: 0.064Ω for reduced power loss
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Fast switching performance
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TO-220 package for easy heat management
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Ideal for power control, switching, and motor drive circuits
25,00 EGP
In stock
In stock
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Description
The IRF530N is a rugged, high-speed N-Channel Power MOSFET designed for switching and amplification in high-power electronic circuits. With its 100V drain-source voltage, 17A continuous current handling, and low R<sub>DS(on)</sub> of 0.064Ω, it provides reliable performance in a wide range of DC and power applications.
Encased in the standard TO-220 package, it is ideal for use with heatsinks in high-efficiency systems like power supplies, motor drivers, and battery-powered applications.
✅ Key Features:
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N-Channel Enhancement Mode MOSFET
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Drain-Source Voltage (V<sub>DS</sub>): 100V
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Continuous Drain Current (I<sub>D</sub>): 17A @ 25°C
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R<sub>DS(on)</sub> (max): 0.064Ω @ V<sub>GS</sub> = 10V
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Fast switching for high-efficiency circuits
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Standard TO-220 package with low thermal resistance
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Low gate drive requirement
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High input impedance for ease of control
📐 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| V<sub>DS</sub> | 100V |
| I<sub>D</sub> (Continuous) | 17A @ 25°C |
| R<sub>DS(on)</sub> (Max) | 0.064Ω @ V<sub>GS</sub> = 10V |
| Gate Threshold Voltage | 2.0V – 4.0V |
| Total Gate Charge (Q<sub>g</sub>) | ~37nC |
| Power Dissipation (P<sub>D</sub>) | 69W |
| Package | TO-220 |
| Operating Temperature Range | -55°C to +175°C |
⚙️ Applications:
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Switching power supplies (SMPS)
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DC-DC converters
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Motor controllers
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Power inverters
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Battery-operated equipment
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PWM drivers
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General-purpose switching
Specification
General
| Weight Weight | 0,0000 g |
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