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IRF530N 17A, 100V, 0.064 Ohm, N-Channel Power MOSFET

25,00 EGP

In stock

100V, 17A N-Channel Power MOSFET
Low RDS(on): 0.064Ω for reduced power loss
Fast switching performance
TO-220 package for easy heat management
Ideal for power control, switching, and motor drive circuits

In stock

Estimated delivery dates: September 14, 2025 – September 17, 2025

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Description

The IRF530N is a rugged, high-speed N-Channel Power MOSFET designed for switching and amplification in high-power electronic circuits. With its 100V drain-source voltage, 17A continuous current handling, and low RDS(on) of 0.064Ω, it provides reliable performance in a wide range of DC and power applications.

Encased in the standard TO-220 package, it is ideal for use with heatsinks in high-efficiency systems like power supplies, motor drivers, and battery-powered applications.

✅ Key Features:

N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS): 100V
Continuous Drain Current (ID): 17A @ 25°C
RDS(on) (max): 0.064Ω @ VGS = 10V
Fast switching for high-efficiency circuits
Standard TO-220 package with low thermal resistance
Low gate drive requirement
High input impedance for ease of control

📐 Technical Specifications:

Parameter	Value
Type	N-Channel MOSFET
V<sub>DS</sub>	100V
I<sub>D</sub> (Continuous)	17A @ 25°C
R<sub>DS(on)</sub> (Max)	0.064Ω @ V<sub>GS</sub> = 10V
Gate Threshold Voltage	2.0V – 4.0V
Total Gate Charge (Q<sub>g</sub>)	~37nC
Power Dissipation (P<sub>D</sub>)	69W
Package	TO-220
Operating Temperature Range	-55°C to +175°C